RUM002N02T2L

Product Center

Home - Discrete Semiconductor -

RUM002N02T2L

Author：netwing Time：2022-05-07 Number Of Views：

Product attributes
Type Description
Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer Rohm Semiconductor
Series-
Packaging tape (TR)
Shear band (CT)
Part status for sale
FET type N channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 20 V
Current at 25 ° C - Continuous drain (Id) 200mA (Ta)
Drive voltage (maximum Rds On, minimum Rds On) 1.2V, 2.5V
Conduction resistance at different IDs and Vgs (maximum value) 1.2 ohms @ 200mA, 2.5V
Vgs (th) at different IDs (maximum) 1V @ 1mA
Vgs (maximum value) ± 8V
Input capacitance (Ciss) at different Vds (maximum) 25 pF @ 10 V
FET function-
Power dissipation (maximum) 150mW (Ta)
Working temperature 150 ° C (TJ)
Installation type: Surface mount type
Supplier Device Packaging VMT3
Packaging/Housing SOT-723
Basic product number RUM002