AO4468

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AO4468

Author：netwing Time：2022-05-09 Number Of Views：

Product attributes
Type Description

Discrete category semiconductor products
Transistor FET, MOSFET Single
Manufacturer Alpha&Omega Semiconductor Inc
Series-
Packaging tape (TR)
Shear band (CT)
Part status not applicable to new design
FET type N channel
Technical MOSFET (Metal Oxide)
Leakage source voltage (Vdss) 30 V
Current at 25 ° C - Continuous drain (Id) 10.5A (Ta)
Drive voltage (maximum Rds On, minimum Rds On) 4.5V, 10V
Conduction resistance at different IDs and Vgs (maximum value) 14 milliohms @ 11.6A, 10V
Vgs (th) at different IDs (maximum) 3V @ 250 µ A
Gate charge (Qg) at different Vgs (maximum) 24 nC @ 10 V
Vgs (maximum value) ± 20V
Input capacitance (Ciss) at different Vds (maximum value) 1200 pF @ 15 V
FET function-
Power dissipation (maximum value) 3.1W (Ta)
Working temperature -55 ° C~150 ° C (TJ)
Installation type: Surface mount type
Supplier Device Packaging 8-SOIC
Package/Housing 8-SOIC (0.154 ", 3.90mm wide)